S8550 H(200-350)(SOT-23)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC(T SS8550 TRANSISTOR (PNP) SOT–23 FEATURES  High Collector Current  Complementary to SS8050 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V 2. EMITTER 3. COLLECTOR IC Collector Current -1.5 A PC Collector Power Dissipation 300 mW Thermal Resistance From Junction To Ambient 417 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 1. BASE ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -100 nA Collector cut-off current ICEO VCE=-20V, IB=0 -100 nA Emitter cut-off current IEBO VEB=-5V, IC=0 -100 nA hFE(1) VCE=-1V, IC=-100mA 120 hFE(2) VCE=-1V, IC=-800mA 40 DC current gain 400 Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB=-80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.2 V -1 V Base-emitter voltage VBE Transition frequency fT Collector output capacitance Cob VCE=-1V, IC=-10mA VCE=-10V,IC=-50mA , f=30MHz VCB=-10V, IE=0, f=1MHz 100 MHz 20 pF CLASSIFICATION OF hFE(1) RANK L H J RANGE 120–200 200–350 300–400 MARKING www.cj-elec.com Y2 1 C,Nov,2015 A,Jun,2014 Typical Characteristics hFE Static Characteristic 500 -180 —— IC 1mA Ta=100℃ 0.9mA 0.8mA -120 0.7mA -100 0.6mA hFE -140 DC CURRENT GAIN COLLECTOR CURRENT IC (mA) -160 0.5mA -80 0.4mA -60 0.3mA -40 100 0.2mA -20 IB=0.1mA -0 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 COLLECTOR-EMITTER VOLTAGE VBEsat —— -4.0 VCE -4.5 VCE=-1V 10 -0.1 -5.0 -1 (V) -10 IC VCEsat -1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -900 -800 Ta=25℃ -700 -600 Ta=100℃ -500 -100 COLLECTOR CURRENT -1000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) Ta=25℃ -400 -300 IC -1000 (mA) IC —— -100 Ta=100℃ Ta=25℃ -10 β=10 -200 -0.1 -1 -10 -100 COLLECTOR CURRENT VBE —— IC β=10 -1 0.2 -1000 -1 -10 -100 COLLECTOR CURRENT (mA) IC Cob/ Cib -1000 IC —— VCB/ VEB 100 f=1MHz IE=0/ IC=0 (pF) -100 o Ta=25 C Cob C o Ta=100 C Ta=25℃ CAPACITANCE IC (mA) Cib COLLCETOR CURRENT -1000 (mA) -10 -1 VCE=-1V -0.1 -200 -300 -400 -500 -600 -700 BASE-EMMITER VOLTAGE fT -900 1 -0.2 -1000 —— IC Pc COLLECTOR POWER DISSIPATION Pc (mW) TRANSITION FREQUENCY fT VCE-10V o Ta=25 C 10 -10 COLLECTOR CURRENT www.cj-elec.com -10 —— V 20 (V) Ta 350 100 -1 -1 REVERSE VOLTAGE (mV) (MHz) 500 VBE -800 250 200 150 100 50 0 -100 IC 300 0 (mA) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃) C,Nov,2015 A,Jun,2014 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.cj-elec.com 3 C,Nov,2015 A,Jun,2014 SOT-23 Tape and Reel www.cj-elec.com 4 C,Nov,2015 A,Jun,2014